STMicroelectronics STGB20H60DF IGBT, 40 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
Техническая документация
Характеристики
Brand
STMicroelectronicsMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
167 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 9.35 x 4.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Информация о товаре
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Информация о наличии не успела загрузиться
тг 3 540,24
тг 1 770,12 Each (In a Pack of 2) (ex VAT)
Стандартная упаковка
2
тг 3 540,24
тг 1 770,12 Each (In a Pack of 2) (ex VAT)
Информация о наличии не успела загрузиться
Стандартная упаковка
2
| Количество | Цена единицы | Per Упаковка |
|---|---|---|
| 2 - 18 | тг 1 770,12 | тг 3 540,24 |
| 20 - 48 | тг 1 720,95 | тг 3 441,90 |
| 50 - 98 | тг 1 466,16 | тг 2 932,32 |
| 100 - 248 | тг 1 421,46 | тг 2 842,92 |
| 250+ | тг 1 381,23 | тг 2 762,46 |
Техническая документация
Характеристики
Brand
STMicroelectronicsMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
167 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 9.35 x 4.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Информация о товаре
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.