Техническая документация
Характеристики
Brand
STMicroelectronicsТип продукции
Модуль драйвера затвора
Функция управления мощностью
Half-Bridge Driver
Для использования с
N Channel MOSFETs
Классификация комплектов
Модуль
Представленное устройство
L99MH98
Наименование комплекта
Automotive Octal Half-bridge Pre-driver
Стандарты/одобрения
RoHS Compliant, ASIL-B safety integrity level, ISO26262 compliant
Информация о товаре
The STMicroelectronics Integrated Octal Half bridge pre driver dedicated to control up to sixteen N-channel MOSFETs. It is intended for DC motor control applications such as automotive power seat control or other applications. A 24 bit serial peripheral interface is used for configuring and controlling the eight half-bridges or four H‑bridge. SPI status registers provide high level diagnostic information such as supply voltage monitoring, the charge pump voltage monitoring, temperature warning and over temperature shutdown. Each gate driver monitors independently its external MOSFET drain source voltage for fault conditions.
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Техническая документация
Характеристики
Brand
STMicroelectronicsТип продукции
Модуль драйвера затвора
Функция управления мощностью
Half-Bridge Driver
Для использования с
N Channel MOSFETs
Классификация комплектов
Модуль
Представленное устройство
L99MH98
Наименование комплекта
Automotive Octal Half-bridge Pre-driver
Стандарты/одобрения
RoHS Compliant, ASIL-B safety integrity level, ISO26262 compliant
Информация о товаре
The STMicroelectronics Integrated Octal Half bridge pre driver dedicated to control up to sixteen N-channel MOSFETs. It is intended for DC motor control applications such as automotive power seat control or other applications. A 24 bit serial peripheral interface is used for configuring and controlling the eight half-bridges or four H‑bridge. SPI status registers provide high level diagnostic information such as supply voltage monitoring, the charge pump voltage monitoring, temperature warning and over temperature shutdown. Each gate driver monitors independently its external MOSFET drain source voltage for fault conditions.