Microchip High Performance SiC Gate Driver Core MOSFET for 2-Channel Gate Driver Core for Charging, Electric Vehicles,

The Microchip AgileSwitch 1200V dual-channel augmented high performance SiC core 1 enables better control and protection of most SiC MOSFET-based power systems. It provides up to 10A of peak current at an operating frequency of 100kHz. The high CMTI gate drive core includes an isolated DC/DC converter and low capacitance isolation barrier for PWM signals and fault feedback. The Intelligent Configuration Tool (ICT) will allow users to appropriately configure the Gate Driver Parameters to their application without having to worry about changing hardware.

• Robust High-Noise-Immunity Design
• Isolated Temperature Monitoring, PWM
• Isolated High Voltage Monitoring, PWM
• Compact 40mm x 61mm form factor
• 2 X 3W output power
• Up to 7 unique fault conditions
• Power supply under-voltage lockout (UVLO)
• Power supply over-voltage lockout (OVLO)
• Desaturation detection settings
• Dead time
• Fault lockout settings
• Automatic reset settings