Vishay 150V 200A, Diode, 3-Pin TO-240AA VS-VSKCS209/150
Техническая документация
Характеристики
Brand
VishayТип монтажа
Монтаж на панель
Тип корпуса
TO-240AA
Максимальный непрерывный прямой ток
200A
Пиковое обратное повторяющееся напряжение
150V
Тип выпрямителя
Коммутация
Число контактов
3
Информация о товаре
IGBT Modules, Vishay
Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Техническая документация
Характеристики
Brand
VishayТип монтажа
Монтаж на панель
Тип корпуса
TO-240AA
Максимальный непрерывный прямой ток
200A
Пиковое обратное повторяющееся напряжение
150V
Тип выпрямителя
Коммутация
Число контактов
3
Информация о товаре
IGBT Modules, Vishay
Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.
Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.
IGBT Modules, Vishay
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.