onsemi HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247, Through Hole

Код товара RS: 671-5424PБренд: onsemiПарт-номер производителя: HGTG20N60A4
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IGBT Discretes, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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onsemi HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247, Through Hole

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P.O.A.

onsemi HGTG20N60A4 IGBT, 70 A 600 V, 3-Pin TO-247, Through Hole

Информация о наличии не успела загрузиться

1

Доступно в кратности 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Информация о наличии не успела загрузиться

Техническая документация

Информация о товаре

IGBT Discretes, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.