Infineon IRG4IBC20KDPBF IGBT, 11.5 A 600 V, 3-Pin TO-220, Through Hole
Техническая документация
Характеристики
Brand
InfineonМаксимальный непрерывный ток коллектора
11,5 A
Максимальное напряжение К-Э (коллектор-эмиттер)
600 В
Максимальное напряжение затвор-эмиттер
±20V
Тип корпуса
TO-220
Тип монтажа
Монтаж на плату в отверстия
Тип канала
N
Число контактов
3
Конфигурация транзистора
Одинарный
Размеры
10.67 x 4.83 x 9.02мм
Минимальная рабочая температура
-55 °C
Максимальная рабочая температура
+150 °C
Информация о товаре
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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тг 983,40
Each (ex VAT)
Стандартная упаковка
1
тг 983,40
Each (ex VAT)
Стандартная упаковка
1
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| Количество | Цена единицы |
|---|---|
| 1 - 24 | тг 983,40 |
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| 500+ | тг 482,76 |
Техническая документация
Характеристики
Brand
InfineonМаксимальный непрерывный ток коллектора
11,5 A
Максимальное напряжение К-Э (коллектор-эмиттер)
600 В
Максимальное напряжение затвор-эмиттер
±20V
Тип корпуса
TO-220
Тип монтажа
Монтаж на плату в отверстия
Тип канала
N
Число контактов
3
Конфигурация транзистора
Одинарный
Размеры
10.67 x 4.83 x 9.02мм
Минимальная рабочая температура
-55 °C
Максимальная рабочая температура
+150 °C
Информация о товаре
Co-Pack IGBT up to 20A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.