STMicroelectronics STP36NF06 MOSFET

Код товара RS: 486-2262Бренд: STMicroelectronicsПарт-номер производителя: STP36NF06
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Техническая документация

Характеристики

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Информация о товаре

N-Channel STripFET™, STMicroelectronics

Вас может заинтересовать
onsemi QFET N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220AB FQP30N06
тг 469,35Each (In a Pack of 5) (ex VAT)
Информация о наличии не успела загрузиться

тг 2 100,90

тг 420,18 Each (In a Pack of 5) (ex VAT)

STMicroelectronics STP36NF06 MOSFET

тг 2 100,90

тг 420,18 Each (In a Pack of 5) (ex VAT)

STMicroelectronics STP36NF06 MOSFET
Информация о наличии не успела загрузиться

Информация о наличии не успела загрузиться

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КоличествоЦена единицыPer Упаковка
5 - 20тг 420,18тг 2 100,90
25 - 95тг 326,31тг 1 631,55
100 - 245тг 263,73тг 1 318,65
250 - 495тг 259,26тг 1 296,30
500+тг 236,91тг 1 184,55
Вас может заинтересовать
onsemi QFET N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220AB FQP30N06
тг 469,35Each (In a Pack of 5) (ex VAT)

Техническая документация

Характеристики

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Height

9.15mm

Minimum Operating Temperature

-55 °C

Информация о товаре

N-Channel STripFET™, STMicroelectronics

Вас может заинтересовать
onsemi QFET N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220AB FQP30N06
тг 469,35Each (In a Pack of 5) (ex VAT)